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Magazine Name : Ieee Transactions On Electron Devices

Year : 1998 Volume number : 45 Issue: 01

Thin-Film Quasi-Soi Power Mosfet Fabricated By Reversed Silicon Wafer Bonding (Article)
Subject: Thin-Film Devices , Mosfet , Direct
Author: Satohi Matsumoto      Toshiaki Yachi      Hiroshi Horie     
page:      105 - 109
Thin-Film Quasi-Soi Power Mosfet Fabricated By Reversed Silicon Wafer Direct Bonding (Article)
Subject: Quasi Rationality , Soi Transistor , Wafer Package
Author: Satohi Matsumoto      Toshiaki Yachi      Hiroshi Horie     
page:      105 - 109
A Physically-Based Model Of The Effective Mobility In Heavily-Doped N-Mosfet'S (Article)
Subject: Physically Segregating Proteins , Effective Damping , Heavily Doped
Author: Stefano Villa      Andrea L. Lacaita      Laura M. Perron     
page:      110 - 115
A Physcally-Based Model Of The Effective Mobility In Heavily-Doped N-Mosfet'S (Article)
Subject: Physically Segregating Proteins , Effective Stl
Author: Stefano Villa      Andrea L. Lacaita      Laura M. Perron     
page:      110 - 115
Positive Bias Temperature Instability In Mosfet'S (Article)
Subject: Position-Based , Temperature , Instabilities
Author: J. F. Zhang      W. Eccleston     
page:      116 - 124
Positive Bias Temperaure Instability In Mosfet'S (Article)
Subject: Positive Real , Temperature , Mosfet
Author: J. F. Zhang      W. Eccleston     
page:      116 - 124
Physical Modeling Of Temperature Dependences Of Soi Cmos Devices And Circuits Including Self-Heating (Article)
Subject: Physical Modeling , Temperature , Dependent
Author: Glenn O. Workman      Jerry G. Fossum      S. R. Krishnan     
page:      125 - 133
Physical Modeling Of Temperature Dependences Of Soi Cmos Devices And Circuits Including Self-Heating (Article)
Subject: Physical Modeling , Dependence , Self-Heating
Author: Glenn O. Workman      Jerry G. Fossum      S. R. Krishnan     
page:      125 - 133
An Improved Mosfet Model For Circuit Siulation (Article)
Subject: Improved Bp Nn , Model , Circuit
Author: S. S. Joardar      Andreas Wild      K. J Burnham     
page:      134 - 148
U Nified Model For The Self-Limiting Hot-Carrier Degradation In Ldd N-Mopdfet'S (Article)
Subject: Color Image , Gate-To-Drain Capacitance , Meteor-Burst Communications
Author: D. S. Ang      C. H. Ling     
page:      149 - 159
A Unified Model For The Self-Limiting Hot-Carrier Degradation In Ldd N-Mosfet'S (Article)
Subject: Charge Pumping Current , Mosfets , Uniform Beams
Author: D. S. Ang      C. H. Ling     
page:      149 - 159
Correlation Between Two Time-Dependent Dielectric Breakdown Measurements For The Gate Oxides Damaged By Plama Processing (Article)
Subject: Correlation , Dielectric Breakdown , Gate Oxide
Author: Koji Eriguchi      Yukiko Kosaka     
page:      160 - 164
Correlation Between Two Time-Dependent Dielectric Breakdown Measurements For The Gate Oxides Damaged By Plasma Processing (Article)
Subject: Correlation , Dielectric , Plasma
Author: Koji Eriguchi      Yukiko Kosaka     
page:      160 - 164
An Analytical Method Of Evaluating Variation Of Th Threshold Voltage Shift Caused By The Negative-Bias Temperature Stress In Poly-Si Tft'S (Article)
Subject: Analytical , Method Of Frame , Negative Artifact
Author: Shigenobu Maeda      Masumi Maegawa      Hirotada Kuriyama     
page:      165 - 172
An Analytical Method Of Evaluating Variation Of The Threshold Voltage Shift Caused By The Negative-Bias Temperature Stress In Poly-Si Tft'S (Article)
Subject: Analytical , Variation , Poly-Si Tft
Author: Shigenobu Maeda      Masumi Maegawa      Talashi Ipposhi     
page:      165 - 172
Investigation Of A Multigigahertz Mosfet Amplifier With An On-Chip Inductor Fabricated On A Simox Wafer (Article)
Subject: Investigation , Mosfet Amplifiers , Simox
Author: Mitsuru Harada      Chikara Yamaguchi      Toshiaki Tsuchiya     
page:      173 - 178
A Physically-Based Model For Quantization Effects In Hole Inversion Layers (Article)
Subject: Model Choice , Effects Of Egr , Hol Transfer
Author: Scott A. Hareland      S. Jallepalli      B M Maziarz     
page:      179 - 186
Two-Dimensional Effects In Titanium Silicidation (Article)
Subject: Two-Dimensional Gas , Silicide , Analysis
Author: Dah-Bin Kao      Martin Manley      Nara Narahari     
page:      187 - 193
A Simultaneously Diffused, Textured , In Situ Oxide Ar-Coated Sola Cell Process (Star Process) For High-Efficiency Silicon Solar Cells (Article)
Subject: Simultaneous Diffusion , High-Efficiency Control , Silicon Steel Core
Author: A Rohatgi      Thomas Krygowski     
page:      194 - 199
A Novel Modeling Technique For Efficiently Computing 3-D Capacitances Of Vlsi Mutilevel Interconnections-Bfem (Article)
Subject: Green Function , Interconnections , 3-D Capacitance , Vlsi
Author: Hsin-Ming Hou      C. S Sheen      Chen-Yang Wu     
page:      200 - 205
A Unified Understanding On Fully-Depleted Soi Nmosfet Hot-Carrier Degradation (Article)
Subject: Degradation , Fully-Depleted Soi Mosfet , Hot Carrier
Author: Srinivasa R. Banna      Philip C. H. Chan      Samuel K. H. Fung     
page:      206 - 212
Design And Fabrication Of Double Modulation Doped Inaias/Inas Heterojunction Fet'S For High-Speed And Millimeter-Wave Applications (Article)
Subject: Epitaxial Growth Floating-Body Effect , High-Speed Circuits/Devices , Semiconducters
Author: Dong Xu      Heiner G. Heib      S. A Krause      G. Bohm     
page:      21 - 30
Investigation Of The Low Field Leakage Current Mechanism In Polysilicon Tft'S (Article)
Subject: Degradation , Density-Of-States , Device Modeling , Polysilicon
Author: O. K. B. Lui      S. W. B. Tam      H. Ohshima     
page:      213 - 217
A Numerical Analysis Of The Storage Times Of Dynamic Randpm-Access Memory Cell Incorporating Ultrathin Dielectrics (Article)
Subject: Dram , Storage Temperatures , Tunneling , Ultrathin Dielectrics
Author: Alex Y. Romanenko      W. Milton Gosney     
page:      218 - 223
Macromodel Development For A Flotox Eeprom (Article)
Subject: Analog Integrated Circuits , Cad , Circuit Modeling , Semiconductor Memories
Author: Greg E. Blonder      Ming Meng     
page:      224 - 229
Modeling Electron And Hole Transport With Full-Band Structure Effects Means Of The Spherical-Harmonics Expansion Of The Bte (Article)
Subject: Boltzmann Equation , Scattering , Mechanisms , Expansion
Author: Maria Cristina Vecchi      Massimo Rudan     
page:      230 - 238
A New Simulation Model For Plasma Ashing Process-Induced Oxide Degradation In Mosfet (Article)
Subject: Plasma , Simulated Systems , Mosfet
Author: Kuo-Feng You      Minchen Chang      Ching-Yuan Wu     
page:      239 - 246
Rapid Thermal Postoxidation Anneal Engineering In Thin Gate Oxides With Al Gates (Article)
Subject: Rapid Thermal , Anneal , Gates
Author: Chih-Yao Chen      Jenn-Gwo Hwu      Ming-Jer Jeng     
page:      247 - 253
Scaling Trends For Device Performance And Reliability In Cfhannel-Engineered N-Mosfets' (Article)
Subject: Channel , Device , Performance , Reliability
Author: Christopher S. Willams      M. A. Littlejohn      William C. Holton     
page:      254 - 260
An Efficient Approach To Noise Analysis Through Multidimensional Physics-Based Models (Article)
Subject: Paper Coating , Effect Heredity , Noise , Throughfall
Author: Fabrizio Bonani      Giovanni Ghione      A.M.F.R. Pinto      R. Kent Smith     
page:      261 - 269
Modelling And Realization Of An Amorphous Silicon Device With Negative Differential Resistance (Article)
Subject: Modeling And Simulation , Differntialed Service
Author: D Caputo      G De Cesare      Jao-Hsian Shiue     
page:      270 - 276
Extension Of The Collector Charge Description For Compact Bipolar Epilayer Models (Article)
Subject: Charge Density Wave (Cdw) , Extension , Bipolar
Author: C. N. De Vreede      Henk C. De. Graaff      Roel G. F. Baets     
page:      277 - 285
Dependence Of The I-V Curve Of A Metal Insulator Semiconductor Switch On Insulator Thickness An Experimental And Theroretical Investigation (Article)
Subject: Miss Ratios , Sram , Silicon , Sio2
Author: P. O. Pettersson      A. Zur      T. C. Mcgill     
page:      286 - 293
Impact Of Transit-Time And Capture Effects On High-Frequency Perfor Mance Of Multiple Quantum-Well Infrared Photodetectors (Article)
Subject: Impact , High-Frequency , Performance , Photodetector
Author: V. Ryzhii      Irina Khmyrova      Maxim Ryzhii     
page:      293 - 298
Matching Analysis Of Deposition Defined 50-Nm Mosfet'S (Article)
Subject: Matching , Deposition , Mosfets
Author: John T. Horstmann      Karl F. Goser      Ulrich Hilleringmann     
page:      299 - 306
The Critical Charge Density Of 4h-Sic Thyristors (Article)
Subject: Critical , Density , Thyristor Bridge
Author: M.E. Levinshtein      John W Palmour      Ranbir Singh     
page:      307 - 312
Investigation Of The Short-Circuit Performance Of An Igbt (Article)
Subject: Investigate , Short-Circuit , Performance
Author: Malay Trivedi      Krishna Shenai     
page:      313 - 320
Photosensitive Field Emitters Including A-Si H P-I-N Photodetection Region (Article)
Subject: Avalanche Multiplication , Field Emitter Arrays , Photodiode On Soi
Author: Kazuaki Sawada      Nobuyuki Matsumura      Takao Ando     
page:      321 - 325
Design Considerations For Millimeter-Wave Power Hbt'S Based On Gain Performance Analysis (Article)
Subject: Heterojunction Bipolar Transistors , Millimeter-Wave Devices
Author: S. I Tanaka      S Murakami      Norio Goto     
page:      36 - 44
Digital Cmos Ic'S In 6h In 6h-Sic Operating On A 5-V Power Supply (Article)
Subject: Cmos , Digital , Operating Data
Author: Sei-Hyung Ryu      Kevin T. Kornegay      James A. Cooper     
page:      45 - 53
Distribution Of Recombination Currents In The Space Charge Region Of Heterostructure Bipolar Devices (Article)
Subject: Amorphous Semiconductor , Semiconducter Device Modeling , Space Charge
Author: F J Pallares      L. F. Marsal      R. Alcubilla     
page:      54 - 61
Effect Of Diffraction And Interference In Submicron Metal-Semiconductor-Metal Photodetectors (Article)
Subject: Diffraction , Interference , Photodetector
Author: Mohamed Arafa      Walter A. Wohlmuth      Ilesanmi Adesida     
page:      62 - 67
Optical Effect In Inaias/Ingaas/Inp Modfet (Article)
Subject: Optical Efficiency From Outdoor Collector Testing , Modfet
Author: H. Mitra      S Singh      R. U. Khan     
page:      68 - 77
Optical Effect In Inals/Ingaas/Inp Modfet (Article)
Subject: Analytic Model , Partial Desorption , Discusses The Dominant Metal-
Author: H. Mitra      S Singh      R.A Khan     
page:      68 - 77
Optically-Controlled Ion-Implanted Gaas Mesfet Characteristic With Opaque Gate (Article)
Subject: Analytic Modeling , Evaluate , Transconductance
Author: B.B Pal      R. U. Khan      K.N. Shubhanga     
page:      78 - 84
Optically-Controlled Ion-Implanted Gaas Mesfet Characteristic With Opaque Gate (Article)
Subject: Optically Activated Devices , Ion-Implanted Mosfet , Gaas
Author: - Shubha      B.B Pal      R. U. Khan     
page:      78 - 84
Transient Response Of Optoelectronic Integrated Bistable Device (Article)
Subject: Optoelectronic Devices , Transient Response
Author: Yousef Zebda      M. M. Khodier      Basim Darwish     
page:      85 - 90
Transient Response Of Optoelectronic Integrated Bistable Device (Article)
Subject: Optoelectronic Devices , Transient Response
Author: M. M. Khodier      Yousef Zebda      Basim Darwish     
page:      85 - 90
Impact Of Local-Negative-Feedback On The Mrs Avalanche Photodetector Operation (Article)
Subject: Avalanche Photodiodes , Near-Infrared , Photosensitiser
Author: Franco Zappa      Andrea L. Lacaita      Carlo Samori     
page:      91 - 97
Impact Of Local-Negative-Feedback On The Mrs Avalanche Photodetector Operation (Article)
Subject: Avalanche Photodiodes , Near-Infrared , Photosensor Assembley
Author: Franco Zappa      Andrea L. Lacaita      Carlo Samori     
page:      91 - 97
A New Write/Erase Method To Improve The Read Disturb Characteristics Based On The Decay Phenomena Of Stress Leakage Current For Flash Memories (Article)
Subject: Write Endurance , Improved Bp Nn , Current
Author: Tetsuo Endoh      Kazuki Shimizu      Fujio Masuoka     
page:      98 - 104